Číslo součásti R6035KNZ1C9 Kategorie MOSFET RoHS Datasheet R6035KNZ1C9 Popis MOSFET Nch 600V 35A Si MOSFET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 95 ns Forward Transconductance - Min 11 S Id - Continuous Drain Current 35 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Part # Aliases Pd - Power Dissipation 379 W Product Type MOSFET Qg - Gate Charge 72 nC Rds On - Drain-Source Resistance 92 mOhms Rise Time 150 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 90 ns Typical Turn-On Delay Time 45 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 3 V