Číslo součásti R6035ENZC8 Kategorie MOSFET RoHS Datasheet R6035ENZC8 Popis MOSFET 10V Drive Nch MOSFET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 80 ns Forward Transconductance - Min 11 S Id - Continuous Drain Current 35 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PF-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 120 W Product Type MOSFET Qg - Gate Charge 110 nC Rds On - Drain-Source Resistance 92 mOhms Rise Time 80 ns Series Super Junction-MOS EN Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 210 ns Typical Turn-On Delay Time 40 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2 V