Číslo součásti R6030KNZC8 Kategorie MOSFET RoHS Datasheet R6030KNZC8 Popis MOSFET Nch 600V 30A Si MOSFET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 50 ns Forward Transconductance - Min 10 s Id - Continuous Drain Current 30 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PF-3 Packaging Tube Part # Aliases Pd - Power Dissipation 86 W Product Type MOSFET Qg - Gate Charge 56 nC Rds On - Drain-Source Resistance 115 mOhms Rise Time 65 ns Series Super Junction-MOS KN Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 35 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 3 V