Číslo součásti SQ3426EV-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ3426EV-T1_GE3 Popis MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 7 ns Forward Transconductance - Min 21 S Id - Continuous Drain Current 7 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 12 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 32 mOhms Rise Time 12 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 19 ns Typical Turn-On Delay Time 9 ns Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V