Číslo součásti SQ3460EV-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ3460EV-T1_GE3 Popis MOSFET 20V 8A 3.6W AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 28 S Height 1.1 mm Id - Continuous Drain Current 8 A Length 3.05 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3.6 W Product Type MOSFET Qg - Gate Charge 14 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 25 mOhms Rise Time 8 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 8 ns Unit Weight Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 8 V Vgs th - Gate-Source Threshold Voltage 400 mV Width 1.65 mm