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TP0620N3-G

TP0620N3-G
Obrázky jsou pouze orientační
Číslo součásti
TP0620N3-G
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET 200V 12Ohm
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
16 ns
Height
5.33 mm
Id - Continuous Drain Current
175 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
12 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Type
FET
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
200 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
My package arrived wet, not know where occurs this fact, but working all right
Quick delivery. Secure packing. Excellent product. Thank you
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Everything is fine!
Více

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Související klíčová slova pro TP06

  • TP0620N3-G Integrovaný
  • TP0620N3-G RoHS
  • TP0620N3-G PDF Datasheet
  • TP0620N3-G Datasheet
  • TP0620N3-G Část
  • TP0620N3-G Koupit
  • TP0620N3-G Distributor
  • TP0620N3-G PDF
  • TP0620N3-G Součástka
  • TP0620N3-G Integrované obvody
  • TP0620N3-G Stáhnout PDF
  • TP0620N3-G Stáhnout datasheet
  • TP0620N3-G Zásobování
  • TP0620N3-G Dodavatel
  • TP0620N3-G Cena
  • TP0620N3-G Datový list
  • TP0620N3-G obraz
  • TP0620N3-G Obrázek
  • TP0620N3-G Inventář
  • TP0620N3-G Skladem
  • TP0620N3-G Originál
  • TP0620N3-G Nejlevnější
  • TP0620N3-G Vynikající
  • TP0620N3-G Bezolovnaté
  • TP0620N3-G Specifikace
  • TP0620N3-G Hot nabídky
  • TP0620N3-G Cena za přestávku
  • TP0620N3-G Technická data

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