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TP0620N3-G P013

TP0620N3-G P013
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Číslo součásti
TP0620N3-G P013
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET P-CH Enhancmnt Mode MOSFET
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
16 ns
Height
5.33 mm
Id - Continuous Drain Current
175 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
1 W
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
15 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
200 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

Kategorie porodu

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Související klíčová slova pro TP06

  • TP0620N3-G P013 Integrovaný
  • TP0620N3-G P013 RoHS
  • TP0620N3-G P013 PDF Datasheet
  • TP0620N3-G P013 Datasheet
  • TP0620N3-G P013 Část
  • TP0620N3-G P013 Koupit
  • TP0620N3-G P013 Distributor
  • TP0620N3-G P013 PDF
  • TP0620N3-G P013 Součástka
  • TP0620N3-G P013 Integrované obvody
  • TP0620N3-G P013 Stáhnout PDF
  • TP0620N3-G P013 Stáhnout datasheet
  • TP0620N3-G P013 Zásobování
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  • TP0620N3-G P013 Nejlevnější
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  • TP0620N3-G P013 Bezolovnaté
  • TP0620N3-G P013 Specifikace
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  • TP0620N3-G P013 Technická data

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