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IGB15N65S5ATMA1

IGB15N65S5ATMA1
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Specifikace

Kategorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.35 V
Configuration
Single
Continuous Collector Current at 25 C
35 A
Continuous Collector Current Ic Max
35 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
105 W
Product Type
IGBT Transistors
Technology
SI

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
My package arrived wet, not know where occurs this fact, but working all right
Yes, they are all here. :)
Goods came in two weeks. Well packed. Track number tracked
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The goods are OK, thank you dealers.
Více

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IGB15N65S5ATMA1 Novinky

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Související klíčová slova pro IGB1

  • IGB15N65S5ATMA1 Integrovaný
  • IGB15N65S5ATMA1 RoHS
  • IGB15N65S5ATMA1 PDF Datasheet
  • IGB15N65S5ATMA1 Datasheet
  • IGB15N65S5ATMA1 Část
  • IGB15N65S5ATMA1 Koupit
  • IGB15N65S5ATMA1 Distributor
  • IGB15N65S5ATMA1 PDF
  • IGB15N65S5ATMA1 Součástka
  • IGB15N65S5ATMA1 Integrované obvody
  • IGB15N65S5ATMA1 Stáhnout PDF
  • IGB15N65S5ATMA1 Stáhnout datasheet
  • IGB15N65S5ATMA1 Zásobování
  • IGB15N65S5ATMA1 Dodavatel
  • IGB15N65S5ATMA1 Cena
  • IGB15N65S5ATMA1 Datový list
  • IGB15N65S5ATMA1 obraz
  • IGB15N65S5ATMA1 Obrázek
  • IGB15N65S5ATMA1 Inventář
  • IGB15N65S5ATMA1 Skladem
  • IGB15N65S5ATMA1 Originál
  • IGB15N65S5ATMA1 Nejlevnější
  • IGB15N65S5ATMA1 Vynikající
  • IGB15N65S5ATMA1 Bezolovnaté
  • IGB15N65S5ATMA1 Specifikace
  • IGB15N65S5ATMA1 Hot nabídky
  • IGB15N65S5ATMA1 Cena za přestávku
  • IGB15N65S5ATMA1 Technická data

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